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Sandia National Laboratories MOCVD Scientist/Engineer (III-V) (Experienced) in Albuquerque, New Mexico

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This posting will be open for application submissions for a minimum of seven (7) calendar days, including the ‘posting date’. Sandia reserves the right to extend the posting date at any time.

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Organization 05246, III-V Optoelectronics & Heterogeneous Integration, is seeking a creative and motivated R&D Materials Science engineer to research, develop, fabricate, and deliver advanced epitaxy solutions for our leading-edge optoelectronic devices. The selected candidate will assume a key role within the robust optoelectronics team, working closely with compound semiconductor device scientists and engineers to make lasers, photonics integrated circuits, photodetectors, photovoltaics, and microelectronics, and novel materials, routinely fabricating a dozen different types of optoelectronic devices each year.

Key functions of this role include, but are not limited to:

  • Directing operations of Sandia’s As/P/Sb/dilute-nitride MOCVD capability and staff

  • Collaborating with device scientists and fabrication engineers to realize device structures that push the boundaries of optoelectronics performance

  • Performing experimental research involving growth and characterization of novel epitaxial materials and device structures

  • Applying and improving existing and new technologies to meet specific performance needs and targets

  • Leading the team in operation and maintenance of MOCVD reactors, toxic gas cabinets, toxic gas monitors, gas abatement units and test/characterization equipment

  • Developing new programs and capabilities in areas that support Sandia mission activities and evolve and improve Sandia’s leading-edge epitaxial capability

  • Delivering results and reporting findings to co-workers and customers

  • Publishing original research in top-tier journals and conference proceedings

    Required:

  • A Master's degree in Electrical Engineering, Physics, Materials Science, or a closely related field plus 5 years of MOCVD experience; or a PhD in one of these fields

  • 3 years proven experience in compound semiconductor MOCVD epitaxial film growth, operation, and scientific principles

  • A record of publication and innovation, as evidenced by peer-reviewed journal articles, conference proceedings, technical books, or issued patents

  • The psychology, dependability, and attention to detail needed to work with extremely hazardous substances including phosphine and arsine

  • The ability to certify in SCBA for maintenance activities

  • The ability to acquire and maintain a DOE L-level security clearance

    Desired:

  • A strong academic performance as evidenced by minimum cumulative GPA(s) of 3.2/4.0 for each relevant undergraduate degree and 3.5/4.0 for each relevant graduate degree

  • Expertise with III-V MOCVD growth, especially arsenides and phosphides

  • An understanding of optoelectronic devices and their epitaxial designs

  • A strong work ethic coupled with a passion for building novel semiconductor devices

  • An established record of successful project execution for R&D activities, including project scheduling, reporting, and delivering results

  • A background in thin film characterization including X-ray Diffraction and Photoluminescence Spectroscopy

  • Experience maintaining MOCVD reactors, toxic gas cabinets, toxic gas monitors, gas abatement units, and test/characterization equipment

  • Experience overseeing contracts, budget, logistics, personnel, and all aspects of safety associated with MOCVD operations

  • Experience developing technical work documents including operating procedures, hazard analyses, maintenance schedules, specifications, and written instructions

  • Experience as a member of an Emergency Response Team

  • Proven troubleshooting abilities for semiconductor fab tools in the areas of electrical, mechanical, electromechanical, optical and vacuum components including custom assemblies

  • The ability to work across fields, and to solve problems in a highly collaborative environment

  • The ability to discover, understand, and articulate customer needs

  • Resourcefulness and flexibility to address rapidly advancing technologies and evolving customer needs

  • Strong self-motivation to work effectively as an independent contributor

  • Strong communication and interpersonal skills as needed to work successfully in a team environment

    Department Description:

The III-V Optoelectronics and Heterogeneous Integration Department develops compound semiconductor optoelectronics and microsystems for national security applications including high-performance computing, communications, renewable energy, sensing and imaging. As part of Sandia’s Microsystems Engineering, Science, and Applications (MESA) Center, we research, design, fabricate, prototype, test and deliver novel lasers, photonic integrated circuits, photonic microsystems, and sensors. We focus on R&D of high performance technology platforms and customized microsystems.We use state-of-the-art materials and fabrication capabilities within Sandia’s MESA cleanroom complex to serve a broad mix of internal and external clients. Core capabilities include:

  • Optical, optoelectronic and electronic modeling and simulation

  • Epitaxial design, materials growth (MOCVD/MBE) and materials characterization

  • Design, microfabrication and testing of III-V photonic devices and infrared detectors

  • Heterogeneous microsystem integration and prototyping

  • High-speed and harsh-environment optoelectronics, including device reliability assessments

Visit our website for more information: www.sandia.gov/mesa/nspc/

About Sandia:

Sandia National Laboratories is the nation’s premier science and engineering lab for national security and technology innovation, with teams of specialists focused on cutting-edge work in a broad array of areas. Some of the main reasons we love our jobs:

  • Challenging work with amazing impact that contributes to security, peace, and freedom worldwide

  • Extraordinary co-workers

  • Some of the best tools, equipment, and research facilities in the world

  • Career advancement and enrichment opportunities

  • Flexible work arrangements for many positions include 9/80 (work 80 hours every two weeks, with every other Friday off) and 4/10 (work 4 ten-hour days each week) compressed workweeks, part-time work, and telecommuting (a mix of onsite work and working from home)

  • Generous vacations, strong medical and other benefits, competitive 401k, learning opportunities, relocation assistance and amenities aimed at creating a solid work/life balance*

World-changing technologies. Life-changing careers. Learn more about Sandia at: http://www.sandia.gov*These benefits vary by job classification.

Security Clearance:

Sandia is required by DOE to conduct a pre-employment drug test and background review that includes checks of personal references, credit, law enforcement records, and employment/education verifications. Applicants for employment need to be able to obtain and maintain a DOE L-level security clearance, which requires U.S. citizenship. If you hold more than one citizenship (i.e., of the U.S. and another country), your ability to obtain a security clearance may be impacted.

Applicants offered employment with Sandia are subject to a federal background investigation to meet the requirements for access to classified information or matter if the duties of the position require a DOE security clearance. Substance abuse or illegal drug use, falsification of information, criminal activity, serious misconduct or other indicators of untrustworthiness can cause a clearance to be denied or terminated by the DOE, resulting in the inability to perform the duties assigned and subsequent termination of employment.

EEO Statement:

All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, age, disability, or veteran status and any other protected class under state or federal law.

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